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TIP120/121/122 TIP125/126/127
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively. TO-220
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INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case 25 o C o T amb 25 C Storage Temperature Max. Operating Junction Temperature TIP120 TIP125 60 60 Value TIP121 TIP126 80 80 5 5 8 0.1 65 2 -65 to 150 150 TIP122 TIP127 100 100 V V V A A A W W
o o
Unit
C C
* For PNP types voltage and current values are negative.
March 2000
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TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions for TIP120/125 for TIP121/126 for TIP122/127 for TIP120/125 for TIP121/126 for TIP122/127 V EB = 5 V I C = 30 mA for TIP120/125 for TIP121/126 for TIP122/127 IC = 3 A IC = 5 A IC = 3 A I C = 0.5 A IC = 3 A I B = 12 mA I B = 20 mA V CE = 3 V V CE = 3 V V CE = 3 V 1000 1000 V CE = 30 V V CE = 40 V V CE = 50 V V CB = 60 V V CB = 80 V V CB = 100 V Min. Typ. Max. 0.5 0.5 0.5 0.2 0.2 0.2 2 Unit mA mA mA mA mA mA mA
I CBO
I EBO
VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * V BE(on) * h FE * Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain
60 80 100 2 4 2.5
V V V V V V
Pulsed: Pulse duration = 300 s, duty cycle < 2 % For PNP types voltage and current values are negative.
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TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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